PSMN2R0-30BL,118

Nexperia PSMNxxx N-Channel MOSFETs - EXPANSION - INACTIVE

Nexperia PSMNxxx N-Channel MOSFETs have been expanded by adding additional drain current (I_D), drain-source on-state resistance (R_DS(on)), gate-drain charge (Q_GD), and total power dissipation (P_tot) ratings. All of these packages are qualified with a junction temperature up to 175ºC. They are designed and qualified for use in a wide range of industrial, communications, and domestic equipment. They are highly efficient due to low switching and conduction losses and are suitable for standard level gate drive sources. Some of these are optimized for 4.5V gate drive utilizing NextPower Superjunction technology and have ultra-low Q_G, Q_GD and Q_OSS for high system efficiencies at low and high loads. Typical applications for these devices include dc-to-dc converters, load switching, motor control, synchronous buck regulators, and server power supplies.
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Nexperia PSMNxxx N-Channel MOSFETs include standard and logic level, regular and enhancement mode, N-Channel MOSFETs in LFPAK, I2PAK, TO-220, and DFN3333-8 packages qualified to 150°C or 175°C. These Nexperia PSMNxxx N-Channel MOSFETs are designed and qualified for use in a wide range of industrial, communications, and domestic equipment. The Nexperia logic level enhancement mode N-Channel MOSFETs in LFPAK packages feature ultra low Q_G, Q_GD, and Q_OSS for high system efficiencies at low and high loads, and ultra low R_DSon and low parasitic inductance. They are also optimized for 4.5V gate drive utilising NextPower Superjunction technology. The Nexperia standard and logic level N-Channel MOSFETs in I2PAK and TO-220 packages feature high efficiency due to low switching and conduction losses and are suitable for standard or logic level gate drive sources.

View the entire PSMNxxx Series N-Channel MOSFETs