GT30J121(Q)

Toshiba
757-GT30J121(Q)
GT30J121(Q)

Mfr.:

Description:
IGBTs 600V/30A DIS

ECAD Model:
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In Stock: 82

Stock:
82 Can Dispatch Immediately
Factory Lead Time:
18 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
kr -,--
Ext. Price:
kr -,--
Est. Tariff:

Pricing (NOK)

Qty. Unit Price
Ext. Price
kr 42,34 kr 42,34
kr 27,96 kr 279,60
kr 19,60 kr 1 960,00
kr 16,12 kr 8 060,00
kr 15,89 kr 15 890,00

Product Attribute Attribute Value Select Attribute
Toshiba
Product Category: IGBTs
RoHS:  
Si
TO-3P-3
Through Hole
Single
600 V
2 V
- 20 V, 20 V
30 A
170 W
- 55 C
+ 150 C
GT30J121
Tube
Brand: Toshiba
Continuous Collector Current Ic Max: 30 A
Product Type: IGBT Transistors
Factory Pack Quantity: 100
Subcategory: IGBTs
Unit Weight: 6,756 g
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CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
EAR99