MJD31C & MJD32C 100V 3A Bipolar Transistors

Nexperia MJD31C and MJD32C 100V 3A Bipolar Junction Transistors (BJT) offer high thermal power dissipation in a power DPAK, TO-252 (SOT428C) Surface-Mounted Device (SMD) plastic package. These devices provide high energy efficiency due to low heat generation and feature low collector-emitter saturation voltage. The Nexperia MJD31C and MJD32C are ideal for various applications, including linear voltage regulators, power management, and constant current drive backlighting.

Results: 3
Select Image Part # Mfr. Description Datasheet Availability Pricing (NOK) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Technology Mounting Style Package/Case Transistor Polarity Configuration Maximum DC Collector Current Collector- Emitter Voltage VCEO Max Emitter- Base Voltage VEBO Collector-Emitter Saturation Voltage Pd - Power Dissipation Gain Bandwidth Product fT Minimum Operating Temperature Maximum Operating Temperature Packaging
Nexperia Bipolar Transistors - BJT SOT428 100V 3A NPN HI PWR BJT 209In Stock
Min.: 1
Mult.: 1
Max.: 209
Reel: 2 500

Si SMD/SMT DPAK-3 (TO-252-3) NPN Single 5 A 100 V 6 V 1.2 V 15 W 3 MHz - 55 C + 150 C Reel, Cut Tape, MouseReel
Nexperia Bipolar Transistors - BJT SOT428 100V 3A PNP HI PWR BJT 1 836In Stock
Min.: 1
Mult.: 1
Max.: 1 836
Reel: 2 500

Si SMD/SMT DPAK-3 (TO-252-3) PNP Single 5 A 100 V 6 V 1.2 V 15 W 3 MHz - 55 C + 150 C Reel, Cut Tape, MouseReel
Nexperia Bipolar Transistors - BJT SOT428 100V 3A PNP HI PWR BJT 1 388In Stock
Min.: 1
Mult.: 1
Max.: 1 388
Reel: 2 500

Si SMD/SMT DPAK-3 (TO-252-3) PNP Single 5 A 100 V 6 V 1.2 V 15 W 3 MHz - 55 C + 150 C Reel, Cut Tape, MouseReel