PM8841D

STMicroelectronics
511-PM8841D
PM8841D

Mfr.:

Description:
Gate Drivers 1A low-side gate driver

ECAD Model:
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In Stock: 21 772

Stock:
21 772 Can Dispatch Immediately
Factory Lead Time:
25 Weeks Estimated factory production time for quantities greater than shown.
Long lead time reported on this product.
Minimum: 1   Multiples: 1
Unit Price:
kr -,--
Ext. Price:
kr -,--
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 3000)

Pricing (NOK)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™
kr 8,09 kr 8,09
kr 5,79 kr 57,90
kr 5,21 kr 130,25
kr 4,57 kr 457,00
kr 4,27 kr 1 067,50
kr 4,08 kr 2 040,00
kr 3,93 kr 3 930,00
Full Reel (Order in multiples of 3000)
kr 3,74 kr 11 220,00
† A MouseReel™ fee of kr 50,00 will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable.

Product Attribute Attribute Value Select Attribute
STMicroelectronics
Product Category: Gate Drivers
RoHS:  
MOSFET Gate Drivers
Low-Side
SMD/SMT
SOT-23-5
1 Driver
1 Output
1 A
10 V
18 V
20 ns
20 ns
- 40 C
+ 125 C
PM8841
Reel
Cut Tape
MouseReel
Brand: STMicroelectronics
Product Type: Gate Drivers
Factory Pack Quantity: 3000
Subcategory: PMIC - Power Management ICs
Technology: Si
Unit Weight: 6,300 mg
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Attributes selected: 0

CNHTS:
8542399000
CAHTS:
8542390000
USHTS:
8542390090
JPHTS:
854239099
TARIC:
8542399000
MXHTS:
8542399999
ECCN:
EAR99

PM8841 Low-Side Gate Driver

STMicroelectronics PM8841 Low-Side Gate Driver is a high frequency single channel low-side MOSFET driver specifically designed to work with digital power conversion microcontrollers, such as the STMicroelectronics STLUX™ family of products. The PM8841 output can sink 1A and source 0.8A. The input levels of the driver are derived by the voltage present at the IN_TH pin (between 2V and 5.5V). This pin is typically connected at the same voltage of the microcontroller supply voltage. The PM8841 device includes both input and output pull-down resistors. UVLO circuitry for input and output stages is present preventing the IC from driving the external MOSFET in unsafe condition.