CoolMOS® Power Transistors

Infineon Technologies has expanded its offering of CoolMOS® Power Transistors that use a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle. These CoolMOS® Power Transistors provide all the benefits of a fast switching SJ MOSFET, while offering an extremely fast and robust body diode. Infineon Technologies CoolMOS® Power Transistors are especially suited for resonant switching PWM stages for PC Silverbox, LCD TV, lighting, server and telecom applications. Infineon Technologies CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.

Results: 6
Select Image Part # Mfr. Description Datasheet Availability Pricing (NOK) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Technology Mounting Style Package/Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Tradename Packaging
Infineon Technologies MOSFETs HIGH POWER_LEGACY Non-Stocked Lead-Time 8 Weeks
Min.: 1
Mult.: 1
Reel: 1 000

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 650 V 31.2 A 257 mOhms - 20 V, 20 V 4 V 118 nC - 55 C + 150 C 277.8 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFETs HIGH POWER_LEGACY Non-Stocked Lead-Time 17 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220FP-3 1 Channel 650 V 22.4 A 351 mOhms - 20 V, 20 V 4 V 8 nC - 55 C + 150 C 34.7 W Tube
Infineon Technologies MOSFETs LOW POWER_LEGACY Non-Stocked Lead-Time 19 Weeks
Min.: 1
Mult.: 1
Reel: 1 000

Si SMD/SMT TO-263 N-Channel 1 Channel 650 V 11.4 A 730 mOhms - 20 V, 20 V 4 V 41 nC - 55 C + 150 C 104.2 W Enhancement Reel, Cut Tape
Infineon Technologies MOSFETs HIGH POWER_LEGACY Non-Stocked Lead-Time 16 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-220-3 N-Channel 1 Channel 650 V 17.5 A 190 mOhms - 20 V, 20 V 3.5 V 68 nC - 55 C + 150 C 151 W Enhancement CoolMOS Tube

Infineon Technologies MOSFETs HIGH POWER_LEGACY Non-Stocked Lead-Time 18 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 700 V 43.3 A 80 mOhms - 20 V, 20 V 4 V 167 nC - 55 C + 150 C 391 W Enhancement Tube

Infineon Technologies MOSFETs LOW POWER_LEGACY Non-Stocked Lead-Time 14 Weeks
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 8.7 A 420 mOhms - 20 V, 20 V 3.5 V 31.5 nC - 55 C + 150 C 83.3 W Enhancement CoolMOS Tube