NXH80T120L3Q0 Power Integrated Module (PIM)

onsemi NXH80T120L3Q0 Power Integrated Module (PIM) contains a T-type neutral-point-clamped (NPC) three-level inverter stage. This three-level inverter consists of two 80A/1200V half-bridge IGBTs with 40A/1200V half-bridge diodes. The NXH80T120L3Q0 power integrated module offers two 50A/600V neutral point clamped (NPC) IGBTs with two 50A/600V NPC diodes. This PIM features lower conduction losses, switching losses, and low VCESAT, enabling designers to achieve high efficiency and superior reliability. The NXH80T120L3Q0 power integrated module offers options with pre-applied thermal interface material (TIM) and without pre-applied TIM, options with solderable pins, press-fit pins, and thermistor. This offers a maximum operating junction temperature of 150°C (under switching conditions). The NXH80T120L3Q0 power integrated module is ideally used in solar inverters and uninterruptable power supplies.

Results: 3
Select Image Part # Mfr. Description Datasheet Availability Pricing (NOK) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Product Configuration Collector- Emitter Voltage VCEO Max Collector-Emitter Saturation Voltage Continuous Collector Current at 25 C Gate-Emitter Leakage Current Pd - Power Dissipation Package/Case Minimum Operating Temperature Maximum Operating Temperature Packaging
onsemi IGBT Modules PIM GENERATION3 Q0PACK 1200V 80A TNPC (SOLDER PIN TIM) 23In Stock
Min.: 1
Mult.: 1

IGBT Modules 1.2 kV 75 A 300 nA 82 W Q0PACK - 40 C + 175 C Tray
onsemi IGBT Modules PIM GENERATION3 Q0PACK 1200V 80A TNPC (PRESS-FIT PIN) Non-Stocked Lead-Time 22 Weeks
Min.: 1
Mult.: 1

IGBT Modules 1.2 kV 75 A 300 nA 82 W Q0PACK - 40 C + 175 C Tray
onsemi IGBT Modules PIM GENERATION3 Q0PACK 1200V 80A TNPC (SOLDER PIN) Non-Stocked Lead-Time 22 Weeks
Min.: 24
Mult.: 24

IGBT Modules Half Bridge 1.2 kV 1.7 V 75 A 300 nA 82 W Q0PACK - 40 C + 175 C Tray