DI010N03PW N-Channel Power MOSFETs

Diotec Semiconductor DI010N03PW N-Channel Power MOSFETs offer a low on-state resistance, a low gate charge (25nC typical), and fast switching times with an Avalanche rating. With a wide -55°C to +150°C junction temperature range, these components offer a 30V drain-source voltage, 1.4W power dissipation, and 20mJ single pulse avalanche energy. The QFN2x2 packaged DI010N03PW MOSFETs are for DC/DC converters, load switches, power management units, battery-powered devices, and commercial/industrial-grade applications.

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 Mfr.
Description Datasheet Availability Pricing (NOK) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Qualification
Tradename
Packaging
Diotec Semiconductor MOSFETs MOSFET, PowerQFN 2x2, 30V, 10A, 150C, N, AEC-Q101
Datasheet
4 075In Stock
MouseReel Available
Min.: 1
Mult.: 1
Reel: 4 000

Si SMD/SMT PowerQFN 2x2 N-Channel 1 Channel 30 V 10 A 12 mOhms - 20 V, 20 V 1.7 V 25 nC - 55 C + 150 C 1.4 W Enhancement AEC-Q101 DI010N03PW-AQ Reel, Cut Tape, MouseReel
Diotec Semiconductor MOSFETs MOSFET, PowerQFN 2x2, 30V, 10A, 150C, N
Datasheet
6 800In Stock
MouseReel Available
Min.: 1
Mult.: 1
Reel: 4 000

Si SMD/SMT PowerQFN 2x2 N-Channel 1 Channel 30 V 7 A 16 mOhms - 20 V, 20 V 2 V 25 nC - 55 C + 150 C 1.4 W Enhancement DI010N03PW Reel, Cut Tape, MouseReel