CGHV96100F2

MACOM
941-CGHV96100F2
CGHV96100F2

Mfr.:

Description:
GaN FETs GaN HEMT 7.9-9.6GHz, 100 Watt

Datasheet:
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Learn more about MACOM CGHV96100F2
This product may require additional documentation to export from the United States.

Availability

Stock:
Non-Stocked
Factory Lead Time:
26 Weeks Estimated factory production time.
Long lead time reported on this product.
Minimum: 10   Multiples: 10
Unit Price:
kr -,--
Ext. Price:
kr -,--
Est. Tariff:
This Product Ships FREE

Pricing (NOK)

Qty. Unit Price
Ext. Price
kr 14 130,31 kr 141 303,10

Product Attribute Attribute Value Select Attribute
MACOM
Product Category: GaN FETs
Delivery Restrictions:
 This product may require additional documentation to export from the United States.
RoHS:  
Screw Mount
440210
N-Channel
100 V
12 A
- 3 V
- 40 C
+ 150 C
Brand: MACOM
Configuration: Single
Development Kit: CGHV96100F2-TB
Gain: 12.4 dB
Maximum Operating Frequency: 9.6 GHz
Minimum Operating Frequency: 7.9 GHz
Output Power: 131 W
Packaging: Tray
Product: GaN HEMTs
Product Type: GaN FETs
Factory Pack Quantity: 10
Subcategory: Transistors
Technology: GaN
Transistor Type: GaN HEMT
Vgs - Gate-Source Breakdown Voltage: - 10 V to 2 V
Unit Weight: 65,235 g
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CAHTS:
8541290000
USHTS:
8541290055
JPHTS:
854129000
KRHTS:
8541299000
TARIC:
8541290000
MXHTS:
8541299900
ECCN:
3A001.b.3.b.2

X-Band GaN HEMTs & MMICs

MACOM X-Band Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) and Monolithic Microwave Integrated Circuits (MMICs) come with various solution platforms. That includes MMICs, internally matched GaN on SiC transistors (IM-FETs), and transistors. These multi-stage MMICs offer a variety of power levels, high gain, and high efficiency, while IM-FETs feature 50Ω building blocks in support of higher power systems. The transistors offer highly accurate modeling support that provides maximum flexibility to optimize amplifier design. The GaN has superior properties compared to silicon or gallium arsenide (GaAs), including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.

CGHV96100F2 GaN HEMT

MACOM CGHV96100F2 Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) on silicon carbide (SiC) substrate is an internally matched (IM) FET that offers excellent power-added efficiency compared to other technologies. GaN provides superior properties to silicon or gallium arsenide (GaAs), including higher breakdown voltage, saturated electron drift velocity, and thermal conductivity. These CGHV96100F2 GaN HEMTs also offer greater power density and wider bandwidths than GaAs transistors. This MACOM IM FET is available in a metal/ceramic flanged package for optimal electrical and thermal performance.

GaN HEMTs

MACOM Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) are designed to deliver high efficiency and high gain. The modules also feature wide bandwidth capabilities, making them ideal for linear and compressed amplifier circuits. GaN offers superior properties compared to silicon or gallium Arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity. For design flexibility, MACOM GaN HEMTs are offered in a variety of package types, including DFN, 440193, 440196, 440166, 440206, and bare die.

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