LMG1025/LMG1025-Q1 Half-Bridge GaN Driver

The Texas Instruments LMG1025/LMG1025-Q1 Half-Bridge GaN Driver  is designed to drive both the high-side and the low-side enhancement mode Gallium Nitride (GaN) FETs in a synchronous buck, boost, or half-bridge configuration. The device has an integrated 100V bootstrap diode and independent inputs for the high-side and low-side outputs, for maximum control flexibility. The high-side bias voltage is generated using a bootstrap technique. It is internally clamped at 5V, which prevents the gate voltage from exceeding the maximum gate-source voltage rating of enhancement-mode GaN FETs. The inputs of the LMG1205/LMG1025-Q1 are TTL logic compatible and can withstand input voltages up to 14V, regardless of the VDD  voltage. The LMG1205/LMG1205-Q1 has split-gate outputs, providing the required flexibility to independently adjust the turn-on and turn-off strength.