STDRIVEG612 600V Half-Bridge Gate Driver

STMicroelectronics STDRIVEG612 600V High-Speed Half-Bridge Gate Driver is optimized for 5V driving enhanced-mode GaN HEMTs. The high-side driver section is designed to support a voltage rail of up to 600V and can be easily supplied by the integrated bootstrap diode. High-current capability, short propagation delay with excellent delay matching, and integrated LDOs make the STDRIVEG612 optimized for driving high-speed GaN.

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Select Image Part # Mfr. Description Datasheet Availability Pricing (NOK) Filter the results in the table by unit price based on your quantity. Qty. RoHS
STMicroelectronics Gate Drivers High voltage and high-speed half-bridge gate driver for GaN power switches
1 000Expected 2/25/2026
Min.: 1
Mult.: 1
Reel: 3 000
STMicroelectronics STDRIVEG612Q
STMicroelectronics STMicroelectronics High voltage and high-speed half-bridge gate driver for GaN power switches Non-Stocked
Min.: 4 900
Mult.: 4 900