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CEL L8104 RF PIN Diode

CEL L8104 RF PIN Diode is designed for high-power antenna switches in two-way radios. This diode features extremely small reverse bias, low capacitance at zero bias, low series resistance, high isolation, and very low insertion loss. The L8104 RF PIN diode offers a capacitance of 1.2pF, 0.75Ω maximum forward series resistance, and 3kΩ typical parallel resistance. L8104 is lead-free, RoHS-compliant, and is available in a hermetic ceramic MELF package.

Features

  • High power handling
  • Low capacitance at zero bias
  • Extremely small reverse bias
  • Low series resistance
  • Very low insertion loss
  • High isolation
  • Hermetic ceramic MELF package
  • Lead-free and RoHS compliant

Specifications

  • 180V reverse voltage
  • 3W power dissipation
  • +175°C junction temperature
  • 10µA reverse current at VR=180V
  • 50mA forward current
  • 1V forward voltage at IF=50mA
  • 1.2pF diode capacitance
  • 0.75Ω typical forward series resistance
  • 3kΩ parallel resistance

Performance Characteristics

Performance Graph - CEL L8104 RF PIN Diode

Dimensions

Mechanical Drawing - CEL L8104 RF PIN Diode
Published: 2019-11-19 | Updated: 2023-07-21