Gen IV SuperGaN® FETs

Renesas Electronics Gen IV SuperGaN® FETs are normally off devices enabling AC-DC bridgeless totem-pole PFC designs. These FETs feature a high voltage GaN High Electron Mobility Transistor (HEMT) with a low voltage silicon MOSFET and offer superior reliability and performance. The Gen IV SuperGaN platform has advanced epi and patented design technologies that simplify manufacturability. This design technology improves efficiency over silicon with a low gate charge, output capacitance, crossover loss, and reverse recovery charge. Renesas Electronics Gen IV FETs are available in a variety of options for datacom, computing, lighting, automotive, and other applications.

Results: 30
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Description Datasheet Availability Pricing (NOK) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Tradename
Renesas Electronics GaN FETs 650V, 30mohm GaN FET in TOLL
Datasheet
351In Stock
MouseReel Available
Min.: 1
Mult.: 1
Reel: 2 000

SMD/SMT TOLL-10 N-Channel 1 Channel 650 V 55.7 A 41 mOhms 4.8 V 24.5 nC - 55C + 150 C 192 W Enhancement SuperGaN
Renesas Electronics GaN FETs 650V, 30mohm GaN FET in TOLT
Datasheet
1 428In Stock
MouseReel Available
Min.: 1
Mult.: 1
Reel: 1 300

SMD/SMT TOLT-16 N-Channel 1 Channel 650 V 55.7 A 41 mOhms - 20 V, + 20 V 4.8 V 24.5 nC - 55 C + 150 C 192 W Enhancement SuperGaN
Renesas Electronics GaN FETs 650V, 30mohm GaN FET in TO247-3L
Datasheet
673In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 55.7 A 41 mOhms - 20 V, + 20 V 4.8 V 24.5 nC - 55 C + 150 C 192 W Enhancement SuperGaN
Renesas Electronics GaN FETs 650V, 100mohm GaN FET in TO220
Datasheet
840In Stock
Min.: 1
Mult.: 1
Reel: 1 000

Through Hole TO-220-3 N-Channel 650 V 18.9 A 110 mOhms - 20 V, + 20 V 3.65 V 14.4 nC - 55 C + 150 C 65.8 W Enhancement SuperGaN
Renesas Electronics GaN FETs 650V, 50mohm GaN FET in TO247-4L
Datasheet
599In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 35 A 60 mOhms - 20 V, + 20 V 4.8 V 16 nC - 55 C + 150 C 132 W Enhancement SuperGaN
Renesas Electronics GaN FETs 650V, 70mohm GaN FET in 8x8 PQFN
Datasheet
2 674In Stock
Min.: 1
Mult.: 1
Reel: 3 000

SMD/SMT PQFN-3 N-Channel 1 Channel 650 V 29 A 85 mOhms - 20 V, + 20 V 4.8 V 8.4 nC - 55 C + 150 C 96 W Enhancement SuperGaN
Renesas Electronics GaN FETs 650V, 70mohm GaN FET in 8x8 PQFN
Datasheet
2 518In Stock
Min.: 1
Mult.: 1
Reel: 3 000

SMD/SMT PQFN-8 N-Channel 1 Channel 650 V 29 A 85 mOhms - 20 V, + 20 V 4.6 V 8.4 nC - 55 C + 150 C 96 W Enhancement SuperGaN
Renesas Electronics GaN FETs 650V, 70mohm GaN FET in TO220
Datasheet
1 216In Stock
Min.: 1
Mult.: 1
Reel: 1 000

Through Hole TO-220-3 N-Channel 1 Channel 650 V 29 A 85 mOhms - 20 V, + 20 V 4.7 V 9 nC - 55 C + 150 C 96 W Enhancement SuperGaN
Renesas Electronics GaN FETs 650V, 70mohm GaN FET in TOLT
Datasheet
1 696In Stock
Min.: 1
Mult.: 1
Reel: 1 300

SMD/SMT TOLT-16 N-Channel 1 Channel 650 V 29 A 85 mOhms - 20 V, + 20 V 4.8 V 9 nC - 55 C + 150 C 96 W Enhancement SuperGaN
Renesas Electronics GaN FETs 650V, 480mohm GaN FET in 5x6 PQFN
Datasheet
3 769In Stock
Min.: 1
Mult.: 1
Reel: 4 000

SMD/SMT QFN-7 N-Channel 1 Channel 650 V 3.6 A 560 mOhms - 10 V, + 10 V 2.8 V 5 nC - 55 C + 150 C 13.2 W Enhancement SuperGaN
Renesas Electronics GaN FETs 650V, 150mohm GaN FET in TO220
Datasheet
835In Stock
Min.: 1
Mult.: 1

Through Hole TO-220-3 N-Channel 1 Channel 650 V 13 A 180 mOhms - 20 V, + 20 V 4.8 V 8 nC - 55 C + 150 C 52 W Enhancement SuperGaN
Renesas Electronics GaN FETs 650V, 480mohm GaN FET in 5x6 PQFN
Datasheet
1 685In Stock
MouseReel Available
Min.: 1
Mult.: 1
Reel: 4 000

SMD/SMT PQFN-3 N-Channel 1 Channel 650 V 3.6 A 560 mOhms - 18 V, + 18 V 2.8 V 9 nC - 55 C + 150 C 13.2 W Enhancement SuperGaN
Renesas Electronics GaN FETs 650V, 35mohm GaN FET in TO247-4L
Datasheet
Non-Stocked Lead-Time 26 Weeks
Min.: 1 200
Mult.: 1 200

Through Hole TO-247-4 N-Channel 1 Channel 650 V 46.5 A 41 mOhms - 20 V, + 20 V 3.6 V 42.7 nC - 55 C + 150 C 156 W Enhancement SuperGaN
Renesas Electronics GaN FETs 650V, 50mohm GaN FET in TOLL
Datasheet
Non-Stocked Lead-Time 16 Weeks
Min.: 2 000
Mult.: 2 000
Reel: 2 000

SMD/SMT TOLL-8 N-Channel 1 Channel 650 V 34 A 60 mOhms - 20 V, + 20 V 4.8 V 16 nC - 55 C + 150 C 119 W Enhancement SuperGaN
Renesas Electronics GaN FETs 650V, 70mohm GaN FET in 8x8 PQFN
Datasheet
Non-Stocked Lead-Time 16 Weeks
Min.: 3 000
Mult.: 3 000
Reel: 3 000

PQFN-8 650 V SuperGaN
Renesas Electronics GaN FETs 650V, 70mohm GaN FET in 8x8 PQFN
Datasheet
Non-Stocked Lead-Time 16 Weeks
Min.: 3 000
Mult.: 3 000
Reel: 3 000

PQFN-8 650 V SuperGaN
Renesas Electronics GaN FETs 650V, 70mohm GaN FET in TOLL
Datasheet
Non-Stocked Lead-Time 16 Weeks
Min.: 2 000
Mult.: 2 000
Reel: 2 000

SMD/SMT TOLL-8 N-Channel 1 Channel 650 V 29 A 60 mOhms - 20 V, + 20 V 4.8 V 8.4 nC - 55 C + 150 C 96 W Enhancement SuperGaN
Renesas Electronics GaN FETs 650V, 100mohm GaN FET in 8x8 PQFN
Datasheet
Non-Stocked Lead-Time 14 Weeks
Min.: 3 000
Mult.: 3 000
Reel: 3 000

SMD/SMT PQFN-8 N-Channel 1 Channel 650 V 18.9 A 110 mOhms - 20 V, + 20 V 4.1 V 14.4 nC - 55 C + 150 C Enhancement SuperGaN
Renesas Electronics GaN FETs 700V, 150mohm GaN FET in 8x8 PQFN
Datasheet
Non-Stocked Lead-Time 14 Weeks
Min.: 3 000
Mult.: 3 000
Reel: 3 000

700 V SuperGaN
Renesas Electronics GaN FETs 700V, 150mohm GaN FET in 8x8 PQFN
Datasheet
Non-Stocked Lead-Time 14 Weeks
Min.: 3 000
Mult.: 3 000
Reel: 3 000

700 V SuperGaN
Renesas Electronics GaN FETs 700V, 300mohm GaN FET in 5x6 PQFN
Datasheet
Non-Stocked Lead-Time 14 Weeks
Min.: 5 000
Mult.: 5 000
Reel: 5 000

700 V SuperGaN
Renesas Electronics GaN FETs 700V, 300mohm GaN FET in 8x8 PQFN
Datasheet
Non-Stocked Lead-Time 14 Weeks
Min.: 3 000
Mult.: 3 000
Reel: 3 000

700 V SuperGaN
Renesas Electronics GaN FETs 700V, 480mohm GaN FET in 5x6 PQFN
Datasheet
Non-Stocked Lead-Time 14 Weeks
Min.: 5 000
Mult.: 5 000
Reel: 5 000

700 V SuperGaN
Renesas Electronics GaN FETs 700V, 480mohm GaN FET in 5x6 PQFN
Datasheet
Non-Stocked Lead-Time 14 Weeks
Min.: 5 000
Mult.: 5 000
Reel: 5 000

700 V SuperGaN
Renesas Electronics GaN FETs 650V, 150mohm GaN FET in 8x8 PQFN
Datasheet
Non-Stocked Lead-Time 14 Weeks
Min.: 3 000
Mult.: 3 000
Reel: 3 000

SMD/SMT PQFN-8 N-Channel 1 Channel 650 V 14.2 A 180 mOhms 20 V 2 V 14 nC - 55 C + 150 C 62.5 W Enhancement SuperGaN